|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4250 DESCRIPTION *High Conversion GainGce = 25 dB TYP. *Low Reverse Transfer CapacitanceCre = 0.45 pF TYP. APPLICATIONS *Designed for TV VHF mixer applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA IB B Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature 25 mA PC 0.1 W TJ 125 Tstg Storage Temperature Range -55~125 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4250 TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 25V; IE= 0 0.1 A IEBO Emitter Cutoff Current VEB= 3V; IC= 0 1.0 A V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 20 V hFE DC Current Gain IC= 5mA ; VCE= 10V 40 300 fT Current-Gain--Bandwidth Product IC= 5mA;VCE= 10V 900 1400 MHz Cre Reverse Transfer Capacitance IE= 0 ; VCB= 10V; f= 1MHz 0.45 0.6 pF Gce Conversion Gain VCC= 12V; f= 200MHz fL= 260MHz 20 25 dB NF Noise Figure 4.3 6 dB isc Websitewww.iscsemi.cn 2 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4250 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4250 isc Websitewww.iscsemi.cn 4 |
Price & Availability of 2SC4250 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |